IRF7233PBFP-Channel 12 V 9.5A (Ta) 2.5W (Ta) Surface Mount 8-SO
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ABRmicro #.ABR2045-IRF723-1013277
ManufacturerInfineon Technologies
MPN #.IRF7233PBF
Estimated Lead Time-
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Datasheet
IRF7233PbF(PDF)
IRF7233PbF(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRF7233
Continuous Drain Current (ID) @ 25°C9.5A (Ta)
Drain-to-Source Voltage (VDS)12 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)74 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6000 pF @ 10 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance20mOhm @ 9.5A, 4.5V
Package Type (Mfr.)8-SO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)600mV @ 250µA (Min)
Package / Case8-SOIC (0.154", 3.90mm Width)
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF7233PBF is a P-channel MOSFET produced by Infineon Technologies, designed for surface mount applications in an 8-SO package. It features a drain-to-source voltage rating of 12V and can handle continuous currents up to 9.5A. The device exhibits a low on-state resistance of 20 milliohms when conducting 9.5A at a gate voltage of 4.5V. Its gate charge is measured at 74 nC at a gate drive of 5V, which indicates efficient switching performance. Additionally, the MOSFET has a threshold voltage of 600mV with a test condition of 250µA, ensuring effective operation in low-voltage applications and a power dissipation capability of 2.5W.
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