IRF7201TRN-Channel 30 V 7.3A (Tc) 2.5W (Tc) Surface Mount 8-SO
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ABRmicro #.ABR2045-IRF720-966619
ManufacturerInfineon Technologies
MPN #.IRF7201TR
Estimated Lead Time-
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Datasheet
IRF7201(PDF)
IRF7201(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C7.3A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)28 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)550 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Tc)
RDS(on) Drain-to-Source On Resistance30mOhm @ 7.3A, 10V
Package Type (Mfr.)8-SO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF7201TR is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mounting in an 8-SO package. It operates with a drain-source voltage of 30 volts and can handle a continuous drain current of 7.3 amperes when adequately heat-sinked (Tc). The device has a power dissipation capacity of 2.5 watts at the case temperature, making it suitable for efficient power management in compact electronic designs. Key electrical characteristics include a gate-source voltage tolerance of ±20 volts, a total gate charge of 28 nanocoulombs at 10 volts, and a threshold voltage of 1 volt at a drain current of 250 microamperes, which provides designers with predictable switching performance.
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