IRF6894MTRPBFN-Channel 25 V 32A (Ta), 160A (Tc) 2.1W (Ta), 54W (Tc) Surface Mount DIRECTFET™ MX
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ABRmicro #.ABR2045-IRF689-926278
ManufacturerInfineon Technologies
MPN #.IRF6894MTRPBF
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Datasheet
IRF6894M(TR)PbF(PDF)
IRF6894M(TR)PbF(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C32A (Ta), 160A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET FeatureSchottky Diode (Body)
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)39 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4160 pF @ 13 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.1W (Ta), 54W (Tc)
RDS(on) Drain-to-Source On Resistance1.3mOhm @ 33A, 10V
Package Type (Mfr.)DIRECTFET™ MX
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 100µA
Package / CaseDirectFET™ Isometric MX
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6894MTRPBF is a surface mount N-Channel MOSFET designed by Infineon Technologies. It is capable of handling up to 32A at a 25V rating when mounted onto an ambient surface (Ta), and 160A with a case temperature (Tc). The power dissipation capability is rated at 2.1W for ambient environments and 54W with appropriate case thermal management. Manufactured in the compact DIRECTFET™ MX package, this MOSFET offers low on-resistance, measured at 1.3mOhm when conducting 33A at a gate-source voltage of 10V, making it suitable for systems where space efficiency and thermal performance are critical. It can operate effectively with gate thresholds of 4.5V and 10V.
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