IRF6811STRPBFN-Channel 25 V 19A (Ta), 74A (Tc) 2.1W (Ta), 32W (Tc) Surface Mount DIRECTFET™ SQ
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ABRmicro #.ABR2045-IRF681-980662
ManufacturerInfineon Technologies
MPN #.IRF6811STRPBF
Estimated Lead Time-
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Datasheet
IRF6811S(TR)PbF(PDF)
IRF6811S(TR)PbF(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C19A (Ta), 74A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1590 pF @ 13 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.1W (Ta), 32W (Tc)
RDS(on) Drain-to-Source On Resistance3.7mOhm @ 19A, 10V
Package Type (Mfr.)DIRECTFET™ SQ
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 35µA
Package / CaseDirectFET™ Isometric SQ
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6811STRPBF is an N-channel MOSFET manufactured by Infineon Technologies. It is designed for surface-mount applications and utilizes the DIRECTFET™ SQ package. This component can handle a drain-source voltage of up to 25 volts with a continuous drain current of 19A at an ambient temperature (Ta) and 74A at a case temperature (Tc). It dissipates power up to 2.1 watts at Ta and 32 watts at Tc. The MOSFET features a low on-resistance of 3.7 milliohms at a 10V gate-source voltage and 19A drain current. It supports a gate-source voltage range of ±16 volts and has a total gate charge of 17 nanoCoulombs at 4.5 volts, making it efficient for fast switching applications.
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