IRF6811STR1PBFN-Channel 25 V 19A (Ta), 74A (Tc) 2.1W (Ta), 32W (Tc) Surface Mount DIRECTFET™ SQ
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ABRmicro #.ABR2045-IRF681-1038643
ManufacturerInfineon Technologies
MPN #.IRF6811STR1PBF
Estimated Lead Time-
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Datasheet
IRF6811S(TR)PbF(PDF)
IRF6811S(TR)PbF(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C19A (Ta), 74A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1590 pF @ 13 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.1W (Ta), 32W (Tc)
RDS(on) Drain-to-Source On Resistance3.7mOhm @ 19A, 10V
Package Type (Mfr.)DIRECTFET™ SQ
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 35µA
Package / CaseDirectFET™ Isometric SQ
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6811STR1PBF is an N-channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications with its DIRECTFET™ SQ packaging. It operates efficiently within a voltage range up to 25V and supports a current of 19A at ambient temperature and 74A with adequate cooling. The device boasts a low on-state resistance of 3.7 milliohms at 19A with a gate voltage of 10V, contributing to reduced power loss during operation. It features a gate threshold voltage of 2.1V at a gate current of 35µA and can withstand gate-source voltages up to ±16V. The thermal capacity of the component allows for 2.1W of power dispersion at ambient temperature and up to 32W with optimal thermal conditions.
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