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IRF6794MTR1PBFN-Channel 25 V 32A (Ta), 200A (Tc) 2.8W (Ta), 100W (Tc) Surface Mount DIRECTFET™ MX
1:$1.9500
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRF679-926668
ManufacturerInfineon Technologies
MPN #.IRF6794MTR1PBF
Estimated Lead Time-
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DatasheetIRF6794M(TR)1PBF(PDF)
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In Stock: 210
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Cut Tape (CT)
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.9500
Ext. Price$ 1.9500
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.9500$1.9500
10$1.6670$16.6710
100$1.4430$144.2880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Cut Tape (CT)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C32A (Ta), 200A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET FeatureSchottky Diode (Body)
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)47 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4420 pF @ 13 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.8W (Ta), 100W (Tc)
RDS(on) Drain-to-Source On Resistance1.7mOhm @ 32A, 10V
Package Type (Mfr.)DIRECTFET™ MX
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.35V @ 100µA
Package / CaseDirectFET™ Isometric MX
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Product Drawings
Environmental & Export Classifications
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6794MTR1PBF is a MOSFET developed by Infineon Technologies, featuring an N-Channel design that supports a maximum voltage of 25V. It is capable of handling a continuous current of 32A when measured at ambient temperature (Ta) and up to 200A under case temperature (Tc) conditions. The power dissipation capacity reaches 2.8W for ambient and 100W for case environments. This surface mount component, housed in a DIRECTFET™ MX package, exhibits an on-resistance of 1.7mOhm at a test current of 32A and gate-source voltage of 10V, with a gate threshold voltage rated at 2.35V for a drain current of 100µA.
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