IRF6785MTR1PBFN-Channel 200 V 3.4A (Ta), 19A (Tc) 2.8W (Ta), 57W (Tc) Surface Mount DIRECTFET™ MZ
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ABRmicro #.ABR2045-IRF678-1031187
ManufacturerInfineon Technologies
MPN #.IRF6785MTR1PBF
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Datasheet
IRF6785MTRPBF(PDF)
IRF6785MTRPBF(PDF)
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C3.4A (Ta), 19A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)36 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1500 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.8W (Ta), 57W (Tc)
RDS(on) Drain-to-Source On Resistance100mOhm @ 4.2A, 10V
Package Type (Mfr.)DIRECTFET™ MZ
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseDirectFET™ Isometric MZ
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Product Drawings
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6785MTR1PBF is a surface mount N-Channel MOSFET developed by Infineon Technologies. It is housed in a compact DIRECTFET™ MZ package and is designed to handle voltages up to 200 V. The device can conduct a continuous current of 3.4A in a standard ambient setting (Ta) and up to 19A with proper thermal management (Tc), with power dissipation ratings of 2.8W (Ta) and 57W (Tc) respectively. It exhibits an input capacitance of 1500 pF at 25 V and features a total gate charge of 36 nC when driven at 10 V. The gate threshold voltage is specified at 10V, making it suitable for various applications requiring efficient power management in a small form factor.
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