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IRF6729MTRPBFN-Channel 30 V 31A (Ta), 190A (Tc) 2.8W (Ta), 104W (Tc) Surface Mount DIRECTFET™ MX

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ABRmicro #.ABR2045-IRF672-1023114
MPN #.IRF6729MTRPBF
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Shipping DateNovember 17, 2024
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Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C31A (Ta), 190A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)63 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6030 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.8W (Ta), 104W (Tc)
RDS(on) Drain-to-Source On Resistance1.8mOhm @ 31A, 10V
Package Type (Mfr.)DIRECTFET™ MX
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.35V @ 150µA
Package / CaseDirectFET™ Isometric MX
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Product Drawings
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6729MTRPBF by Infineon Technologies is an N-Channel MOSFET designed for high current handling and efficient performance in surface mount configurations. This component supports a drain-source voltage of 30V and exhibits considerable current handling capabilities with ratings of 31A at ambient temperature (Ta) and 190A at case temperature (Tc). It has power dissipation ratings of 2.8W at Ta and 104W at Tc, providing flexibility in thermal management. The MOSFET features a gate-to-source threshold voltage of ±20V and operates effectively at a gate charge of 2.35V with a test current of 150µA, complemented by an input capacitance of 6030 pF at 15V. The inclusion of the DIRECTFET™ MX package enables efficient heat dissipation and compact design, making it suitable for various power management applications.
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