IRF6716MTRPBFN-Channel 25 V 39A (Ta), 180A (Tc) 3.6W (Ta), 78W (Tc) Surface Mount DIRECTFET™ MX
1:$2.3330
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ABRmicro #.ABR2045-IRF671-942415
ManufacturerInfineon Technologies
MPN #.IRF6716MTRPBF
Estimated Lead Time-
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Datasheet
IRF6716M(TR)PbF(PDF)
IRF6716M(TR)PbF(PDF)
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.3330
Ext. Price$ 2.3330
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.3330$2.3330
10$1.9560$19.5610
100$1.5820$158.2060
500$1.4070$703.3750
1000$1.2050$1204.8750
2000$1.1340$2267.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberIRF6716
Continuous Drain Current (ID) @ 25°C39A (Ta), 180A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)59 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5150 pF @ 13 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation3.6W (Ta), 78W (Tc)
RDS(on) Drain-to-Source On Resistance1.6mOhm @ 40A, 10V
Package Type (Mfr.)DIRECTFET™ MX
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.4V @ 100µA
Package / CaseDirectFET™ Isometric MX
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6716MTRPBF by Infineon Technologies is an N-Channel MOSFET designed for high power performance in a compact surface mount package. It boasts a high continuous current capability of up to 39A at ambient temperature and 180A when mounted on a thermal-controlled substrate. This device supports a maximum voltage of 25V and can dissipate up to 3.6W in ambient air and 78W on a thermally conducive mounting surface. The MOSFET features a gate charge of 59 nC at 4.5 V, which contributes to efficient switching performance. The package style is the innovative DIRECTFET™ MX, promoting effective thermal management and space-saving in circuit designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.