IRF6648TRPBFN-Channel 60 V 86A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN
1:$1.9500
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ABRmicro #.ABR2045-IRF664-1022940
ManufacturerInfineon Technologies
MPN #.IRF6648TRPBF
Estimated Lead Time12 Weeks
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Datasheet
IRF6648(TR)PbF(PDF)
IRF6648(TR)PbF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.9500
Ext. Price$ 1.9500
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.9500$1.9500
10$1.6180$16.1820
100$1.2890$128.8810
500$1.0900$545.0630
1000$0.9250$925.4380
2000$0.8790$1757.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRF6648
Continuous Drain Current (ID) @ 25°C86A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)50 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2120 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.8W (Ta), 89W (Tc)
RDS(on) Drain-to-Source On Resistance7mOhm @ 17A, 10V
Package Type (Mfr.)DIRECTFET™ MN
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.9V @ 150µA
Package / CaseDirectFET™ Isometric MN
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Datasheets
Environmental Information
Other Related Documents
PCN Design/Specification
PCN Packaging
Product Drawings
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6648TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications using the DIRECTFET™ MN package. This component can handle a drain-source voltage of up to 60 volts and a continuous current of 86A at a case temperature. It features a low on-state resistance of 7 milliohms at 17A and 10V, supporting efficient power conduction. Additionally, the device has a power dissipation capacity of 2.8W at ambient temperature and 89W at case temperature. With an input capacitance of 2120 pF at 25 volts, it is engineered for high-efficiency performance in compact electronic designs.
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