IRF6648TR1N-Channel 60 V 86A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN
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ABRmicro #.ABR2045-IRF664-1009178
ManufacturerInfineon Technologies
MPN #.IRF6648TR1
Estimated Lead Time-
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)
Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C86A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)50 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2120 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.8W (Ta), 89W (Tc)
RDS(on) Drain-to-Source On Resistance7mOhm @ 17A, 10V
Package Type (Mfr.)DIRECTFET™ MN
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.9V @ 150µA
Package / CaseDirectFET™ Isometric MN
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Product Drawings
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level2 (1 Year, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6648TR1 is a surface mount N-Channel MOSFET designed by Infineon Technologies, featuring a DIRECTFET™ MN package that optimizes its performance and thermal management. It is capable of handling voltage levels up to 60 V and current levels reaching 86A when measured at the case (Tc). It can dissipate power up to 2.8W in ambient conditions (Ta) and up to 89W when considering the case temperature (Tc). With a typical on-resistance of 7 milliohms at 17A and 10V, it ensures efficient current conduction. The MOSFET also exhibits an input capacitance of 2120 pF at 25 V, making it suitable for a variety of demanding electronic applications requiring high power efficiency.
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