IRF6645TRPBFN-Channel 100 V 5.7A (Ta), 25A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SJ
1:$0.9050
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ABRmicro #.ABR2045-IRF664-1031999
ManufacturerInfineon Technologies
MPN #.IRF6645TRPBF
Estimated Lead Time12 Weeks
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Datasheet
IRF6645(TR)PbF(PDF)
IRF6645(TR)PbF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.9050
Ext. Price$ 0.9050
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9050$0.9050
10$0.7520$7.5230
100$0.5980$59.8190
500$0.5410$270.4060
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRF6645
Continuous Drain Current (ID) @ 25°C5.7A (Ta), 25A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)890 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.2W (Ta), 42W (Tc)
RDS(on) Drain-to-Source On Resistance35mOhm @ 5.7A, 10V
Package Type (Mfr.)DIRECTFET™ SJ
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.9V @ 50µA
Package / CaseDirectFET™ Isometric SJ
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Datasheets
Environmental Information
Other Related Documents
PCN Design/Specification
PCN Packaging
Product Drawings
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6645TRPBF is an N-Channel MOSFET transistor from Infineon Technologies, designed for efficient switching and amplification in electronic circuits. It supports a maximum voltage of 100 V and can handle currents up to 5.7A at ambient temperature (Ta) and 25A at case temperature (Tc). It dissipates power up to 2.2W at Ta and 42W at Tc, making it suitable for thermal management in constrained environments. The device is encased in a DIRECTFET™ SJ surface mount package, featuring a threshold voltage of 10V and a gate-source voltage rating of ±20V, with a gate charge voltage of 4.9V at a 50µA drain current.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.