IRF6628TRPBFN-Channel 25 V 27A (Ta), 160A (Tc) 2.8W (Ta), 96W (Tc) Surface Mount DIRECTFET™ MX
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ABRmicro #.ABR2045-IRF662-967663
ManufacturerInfineon Technologies
MPN #.IRF6628TRPBF
Estimated Lead Time-
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Datasheet
IRF6628(TR)PbF(PDF)
IRF6628(TR)PbF(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C27A (Ta), 160A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)47 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3770 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.8W (Ta), 96W (Tc)
RDS(on) Drain-to-Source On Resistance2.5mOhm @ 27A, 10V
Package Type (Mfr.)DIRECTFET™ MX
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.35V @ 100µA
Package / CaseDirectFET™ Isometric MX
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6628TRPBF by Infineon Technologies is an N-Channel MOSFET characterized by its ability to handle up to 25V and 27A under ambient conditions, while it can manage significantly higher current, up to 160A, with proper thermal management when mounted on a suitable surface. It offers a low on-resistance of 2.5 milliohms at 27A and 10V, optimizing power efficiency, and features a total gate charge of 47 nanocoulombs at 4.5V. This MOSFET comes in a DIRECTFET™ MX surface mount package, which is designed to enhance thermal performance and facilitate integration into compact electronic designs.
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