IRF6626TR1N-Channel 30 V 16A (Ta), 72A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
N/A
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ABRmicro #.ABR2045-IRF662-920152
ManufacturerInfineon Technologies
MPN #.IRF6626TR1
Estimated Lead Time-
SampleGet Free Sample
Datasheet
IRF6626(PDF)
IRF6626(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C16A (Ta), 72A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)29 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2380 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.2W (Ta), 42W (Tc)
RDS(on) Drain-to-Source On Resistance5.4mOhm @ 16A, 10V
Package Type (Mfr.)DIRECTFET™ ST
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.35V @ 250µA
Package / CaseDirectFET™ Isometric ST
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6626TR1, manufactured by Infineon Technologies, is an N-channel MOSFET transistor designed for surface mount applications, utilizing the DIRECTFET™ package type. It has a voltage rating of 30V and can handle continuous currents of 16A at ambient temperature (Ta) and 72A with proper case temperatures (Tc). The power dissipation capabilities are 2.2W at Ta and 42W at Tc. This device shows a conduction performance with an on-resistance of 5.4 milliohms at 16A, when driven at a gate-source voltage of 10V, and features an input capacitance of 2380 pF at 15V, making it suitable for high-efficiency power management in constrained space environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.