IRF6623TR1PBFN-Channel 20 V 16A (Ta), 55A (Tc) 1.4W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
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ABRmicro #.ABR2045-IRF662-931722
ManufacturerInfineon Technologies
MPN #.IRF6623TR1PBF
Estimated Lead Time-
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Datasheet
IRF6623(TR)PbF(PDF)
IRF6623(TR)PbF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C16A (Ta), 55A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1360 pF @ 10 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation1.4W (Ta), 42W (Tc)
RDS(on) Drain-to-Source On Resistance5.7mOhm @ 15A, 10V
Package Type (Mfr.)DIRECTFET™ ST
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / CaseDirectFET™ Isometric ST
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Product Drawings
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6623TR1PBF is an N-Channel MOSFET manufactured by Infineon Technologies. It features a maximum voltage rating of 20V and can handle currents up to 16A when mounted on a standard circuit board (Ta), or up to 55A when mounted on a properly designed heat sink (Tc). Its power dissipation capabilities reach up to 1.4W for a standard board and 42W for a heat sink application. The part has a maximum gate charge of 1360 pF at 10V, an on-resistance of 5.7mOhm at 15A and 10V, and a threshold voltage of 2.2V at a current of 250µA. The device is housed in a DIRECTFET™ Surface Mount package, which is known for its compact size and efficient thermal management.
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