IRF6620TR1N-Channel 20 V 27A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
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ABRmicro #.ABR2045-IRF662-1033751
ManufacturerInfineon Technologies
MPN #.IRF6620TR1
Estimated Lead Time-
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Datasheet
IRF6620(PDF)
IRF6620(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C27A (Ta), 150A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)42 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4130 pF @ 10 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.8W (Ta), 89W (Tc)
RDS(on) Drain-to-Source On Resistance2.7mOhm @ 27A, 10V
Package Type (Mfr.)DIRECTFET™ MX
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.45V @ 250µA
Package / CaseDirectFET™ Isometric MX
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6620TR1 is an N-Channel MOSFET produced by Infineon Technologies, designed for surface mount applications using the DIRECTFET™ MX package. It operates at a voltage of 20 V and can handle a continuous drain current of 27A at ambient temperature (Ta) and 150A at case temperature (Tc). The power dissipation is rated at 2.8W for Ta and 89W for Tc, emphasizing its capability to manage significant power levels. It features a gate charge of 4130 pF at 10 V and a threshold voltage of 2.45V at 250µA. Furthermore, it exhibits a low on-state resistance of 2.7mOhm at 27A and 10V, indicating efficient performance with minimal power loss.
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