IRF6619TR1N-Channel 20 V 30A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
1:$1.5900
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ABRmicro #.ABR2045-IRF661-950859
ManufacturerInfineon Technologies
MPN #.IRF6619TR1
Estimated Lead Time-
SampleGet Free Sample
Datasheet
IRF6619(PDF)
IRF6619(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.5900
Ext. Price$ 1.5900
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.5900$1.5900
10$1.3580$13.5790
100$1.1750$117.5130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C30A (Ta), 150A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)57 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5040 pF @ 10 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.8W (Ta), 89W (Tc)
RDS(on) Drain-to-Source On Resistance2.2mOhm @ 30A, 10V
Package Type (Mfr.)DIRECTFET™ MX
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.45V @ 250µA
Package / CaseDirectFET™ Isometric MX
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6619TR1 is an N-Channel MOSFET from Infineon Technologies, optimized for use in surface-mount applications with its DIRECTFET™ MX package design. This component is capable of handling a drain-source voltage of 20 volts and supports a continuous drain current of up to 30A at ambient temperature (Ta) and 150A when mounted on a case (Tc), with power dissipation ratings of 2.8W (Ta) and 89W (Tc). It also features a substantial gate charge of 57 nC at 4.5 volts and a typical input capacitance of 5040 pF at 10 volts. The device is engineered to operate within a maximum drain-source voltage tolerance of ±20V, making it suitable for high-performance electrical switching tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.