IRF6617TRPBFN-Channel 30 V 14A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
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ABRmicro #.ABR2045-IRF661-931616
ManufacturerInfineon Technologies
MPN #.IRF6617TRPBF
Estimated Lead Time-
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Datasheet
IRF6617(TR)PbF(PDF)
IRF6617(TR)PbF(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIRF6617
Continuous Drain Current (ID) @ 25°C14A (Ta), 55A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1300 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.1W (Ta), 42W (Tc)
RDS(on) Drain-to-Source On Resistance8.1mOhm @ 15A, 10V
Package Type (Mfr.)DIRECTFET™ ST
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.35V @ 250µA
Package / CaseDirectFET™ Isometric ST
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6617TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies. It is designed for surface mount configurations using the DIRECTFET™ package, offering high efficiency and robust performance. This component can handle 30 V and current ratings of 14A at ambient temperature (Ta) and 55A with appropriate cooling (Tc). It has power dissipation capabilities of 2.1W at ambient temperature and up to 42W with cooling. Furthermore, the MOSFET features a gate charge of 17 nC at 4.5 V and a capacitance value of 1300 pF at 15 V, which supports its swift switching characteristics and suitability for demanding electrical environments.
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