IRF6617TR1PBFN-Channel 30 V 14A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
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ABRmicro #.ABR2045-IRF661-966237
ManufacturerInfineon Technologies
MPN #.IRF6617TR1PBF
Estimated Lead Time-
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Datasheet
IRF6617(TR)PbF(PDF)
IRF6617(TR)PbF(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C14A (Ta), 55A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1300 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.1W (Ta), 42W (Tc)
RDS(on) Drain-to-Source On Resistance8.1mOhm @ 15A, 10V
Package Type (Mfr.)DIRECTFET™ ST
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.35V @ 250µA
Package / CaseDirectFET™ Isometric ST
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6617TR1PBF by Infineon Technologies is an N-Channel MOSFET designed for surface mount applications. It operates with a voltage of 30V and can handle a continuous current of 14A in free air (Ta) and up to 55A with proper case temperature (Tc). The device exhibits a low on-resistance of 8.1mOhm at 15A and 10V, ensuring efficient performance. With a threshold voltage of 2.35V at a gate current of 250µA, it has a maximum power dissipation of 2.1W in free air and 42W with adequate case cooling. Additionally, the capacitance at 15V is 1300 pF, making it suitable for high-frequency applications. The device is encapsulated in a DIRECTFET™ package, enabling effective thermal management.
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