IRF6611TRPBFN-Channel 30 V 32A (Ta), 150A (Tc) 3.9W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
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ABRmicro #.ABR2045-IRF661-978140
ManufacturerInfineon Technologies
MPN #.IRF6611TRPBF
Estimated Lead Time-
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Datasheet
IRF6611(TR)PbF(PDF)
IRF6611(TR)PbF(PDF)
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C32A (Ta), 150A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)56 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4860 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation3.9W (Ta), 89W (Tc)
RDS(on) Drain-to-Source On Resistance2.6mOhm @ 27A, 10V
Package Type (Mfr.)DIRECTFET™ MX
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.25V @ 250µA
Package / CaseDirectFET™ Isometric MX
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6611TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, specifically designed to handle a maximum drain-source voltage of 30V. It can manage a continuous current of up to 32A when mounted on the ambient area (Ta) and up to 150A when suitably cooled to support the case (Tc). This MOSFET has a power dissipation of 3.9W in the Ta condition and 89W in the Tc condition. It features a surface-mount DIRECTFET™ MX package, which aids in efficient thermal management and space-saving on a circuit board. The MOSFET operates at gate voltages of 4.5V and 10V, with a maximum gate-to-source voltage tolerance of ±20V. Additionally, it has an input capacitance of 4860 pF at 15V.
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