IRF6601N-Channel 20 V 26A (Ta), 85A (Tc) 3.6W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MT
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ABRmicro #.ABR2045-IRF660-909865
ManufacturerInfineon Technologies
MPN #.IRF6601
Estimated Lead Time-
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Datasheet
IRF6601/TR1(PDF)
IRF6601/TR1(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 10, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C26A (Ta), 85A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)45 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3440 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Maximum Power Dissipation3.6W (Ta), 42W (Tc)
RDS(on) Drain-to-Source On Resistance3.8mOhm @ 26A, 10V
Package Type (Mfr.)DIRECTFET™ MT
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / CaseDirectFET™ Isometric MT
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)