IRF6215STRRPBFP-Channel 150 V 13A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-IRF621-926349
ManufacturerInfineon Technologies
MPN #.IRF6215STRRPBF
Estimated Lead Time-
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Datasheet
IRF6215S/L(PDF)
IRF6215S/L(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C13A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)66 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)860 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 110W (Tc)
RDS(on) Drain-to-Source On Resistance290mOhm @ 6.6A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6215STRRPBF is a P-channel MOSFET manufactured by Infineon Technologies, featuring a 150V drain-source voltage and a continuous current rating of 13A at a case temperature (Tc). It is designed to deliver a power dissipation of 3.8W in free air (Ta) and 110W when properly mounted on a heatsink (Tc). This surface-mount device utilizes a D2PAK package type for efficient thermal management and easy integration into circuit boards. The MOSFET exhibits an on-state resistance of 290 milliohms at a 6.6A current with a gate-source voltage of 10V, demonstrating its capability for high-efficiency switching applications.
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