IRF6215PBFP-Channel 150 V 13A (Tc) 110W (Tc) Through Hole TO-220AB
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ABRmicro #.ABR2045-IRF621-1006671
ManufacturerInfineon Technologies
MPN #.IRF6215PBF
Estimated Lead Time-
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Datasheet
IRF6215PbF(PDF)
IRF6215PbF(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C13A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)66 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)860 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation110W (Tc)
RDS(on) Drain-to-Source On Resistance290mOhm @ 6.6A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF6215PBF, manufactured by Infineon Technologies, is a P-Channel MOSFET designed to handle a voltage of 150 V and a current of 13 A (at Tc). It features a power dissipation capability of 110 W (at Tc) and comes in a through-hole TO-220AB package. This MOSFET has a threshold voltage of 10 V and can handle gate-source voltages up to ±20 V. It exhibits an on-resistance of 290 milliohms when conducting a current of 6.6 A at a gate-source voltage of 10 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.