IRF60R217N-Channel 60 V 58A (Tc) 83W (Tc) Surface Mount TO-252AA (DPAK)
1:$1.1110
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRF60R-981764
ManufacturerInfineon Technologies
MPN #.IRF60R217
Estimated Lead Time12 Weeks
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Datasheet
IRF60R217(PDF)
IRF60R217(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.1110
Ext. Price$ 1.1110
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1110$1.1110
10$0.9100$9.0950
100$0.7080$70.7630
500$0.5990$299.6250
1000$0.4880$487.6880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesStrongIRFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRF60R217
Continuous Drain Current (ID) @ 25°C58A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)66 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2170 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation83W (Tc)
RDS(on) Drain-to-Source On Resistance9.9mOhm @ 35A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.7V @ 50µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
Other Related Documents
PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF60R217 is a surface-mount N-Channel MOSFET manufactured by Infineon Technologies, designed for handling up to 60 volts and 58 amperes in a compact TO-252AA (DPAK) package. It achieves efficient thermal performance with a power dissipation rating of 83 watts at case temperature. The MOSFET features a threshold voltage of 3.7 volts at a minimal current of 50 microamperes and offers a low on-resistance of 9.9 milliohms at a current of 35 amperes and gate-source voltage of 10 volts, making it suitable for high-efficiency power management in electronic circuits.
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