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IRF5305LP-Channel 55 V 31A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-262

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ABRmicro #.ABR2045-IRF530-930207
MPN #.IRF5305L
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In Stock: 11
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Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C31A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)63 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1200 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 110W (Tc)
RDS(on) Drain-to-Source On Resistance60mOhm @ 16A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF5305L is a P-Channel MOSFET manufactured by Infineon Technologies, designed for efficient control in electronic circuits. It operates at a maximum voltage of 55V and can handle continuous currents up to 31A under specific conditions (Tc). This MOSFET is capable of dissipating power up to 110W when mounted on a heat sink (Tc) and has a thermal power dissipation of 3.8W when air-cooled (Ta). With a gate charge of 63 nanocoulombs when driven at 10V, it allows for fast switching speeds. The device is housed in a TO-262 through-hole package, facilitating various installation configurations in power electronics systems.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.