IRF450N-Channel 500 V 12A (Tc) 150W (Tc) Through Hole TO-204AA (TO-3)
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ABRmicro #.ABR2045-IRF450-969387
ManufacturerInfineon Technologies
MPN #.IRF450
Estimated Lead Time-
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)120 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2700 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation150W (Tc)
RDS(on) Drain-to-Source On Resistance500mOhm @ 12A, 10V
Package Type (Mfr.)TO-204AA (TO-3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-204AA, TO-3
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF450 from Infineon Technologies is an N-Channel MOSFET that is designed for high-voltage and high-current applications. It features a drain-source voltage rating of 500 V and can conduct a current of up to 12 A under specified conditions, delivering a maximum power dissipation of 150 W when adequately cooled. The device is encapsulated in a durable TO-204AA (TO-3) through-hole package, which facilitates efficient heat dissipation. Its capacitance is rated at 2700 pF at 25 V, and it offers a low on-state resistance of 500 mOhms at 12 A and 10 V. The threshold voltage is measured at 4 V with a gate current of 250 µA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.