IRF40DM229N-Channel 40 V 159A (Tc) 83W (Tc) Surface Mount DirectFET™ Isometric MF
1:$2.1280
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ABRmicro #.ABR2045-IRF40D-944939
ManufacturerInfineon Technologies
MPN #.IRF40DM229
Estimated Lead Time-
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Datasheet
IRF40DM229(PDF)
IRF40DM229(PDF)
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Tape & Reel (TR)Cut Tape (CT)
Shipping DateNovember 16, 2024
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SeriesStrongIRFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Lifecycle StatusObsolete
Base Product NumberIRF40DM229
Continuous Drain Current (ID) @ 25°C159A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)161 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5317 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation83W (Tc)
RDS(on) Drain-to-Source On Resistance1.85mOhm @ 97A, 10V
Package Type (Mfr.)DirectFET™ Isometric MF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 100µA
Package / CaseDirectFET™ Isometric MF
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PCN Design/Specification
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Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF40DM229 from Infineon Technologies is an N-Channel MOSFET designed for high-efficiency power management applications. It operates with a drain-source voltage of 40 V and can handle a continuous drain current of up to 159A at a specified case temperature. The device features a power dissipation rating of 83W, demonstrating its capability to manage substantial power loads. Encapsulated in a surface-mount DirectFET™ Isometric MF package, it offers a low-profile form factor. The MOSFET showcases a total gate charge of 5317 pF at 25 V, with threshold voltages of 6V and 10V, and a gate-source voltage measurement of 3.9V at 100µA, indicating its effective switching characteristics.
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