IRF3711ZCLPBFN-Channel 20 V 92A (Tc) 79W (Tc) Through Hole TO-262
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ABRmicro #.ABR2045-IRF371-977119
ManufacturerInfineon Technologies
MPN #.IRF3711ZCLPBF
Estimated Lead Time-
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Datasheet
IRF3711ZC(S,L)PbF(PDF)
IRF3711ZC(S,L)PbF(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C92A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)24 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2150 pF @ 10 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation79W (Tc)
RDS(on) Drain-to-Source On Resistance6mOhm @ 15A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.45V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF3711ZCLPBF is an N-Channel MOSFET produced by Infineon Technologies. It is designed to handle a maximum voltage of 20V and supports a continuous current of 92A under controlled conditions. The device features a power dissipation capacity of 79 watts when mounted through-hole in a TO-262 package. Additionally, the MOSFET has an input capacitance of 2150 pF under a 10V bias, a gate-to-source threshold voltage of 2.45V at 250µA, and can tolerate gate-source voltages up to ±20V. This combination of characteristics makes it suitable for handling significant power levels in a compact form factor.
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