IRF3711SPBFN-Channel 20 V 110A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-IRF371-1015216
ManufacturerInfineon Technologies
MPN #.IRF3711SPBF
Estimated Lead Time-
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Datasheet
IRF3711(S,L)(PDF)
IRF3711(S,L)(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C110A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)44 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2980 pF @ 10 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.1W (Ta), 120W (Tc)
RDS(on) Drain-to-Source On Resistance6mOhm @ 15A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF3711SPBF is an N-channel MOSFET manufactured by Infineon Technologies, designed for surface mounting with a D2PAK package. It operates with a maximum voltage of 20V and can handle a continuous current of up to 110A when properly cooled. This MOSFET presents a low on-state resistance of 6mOhm at 15A and 10V, providing efficient switching performance. The device's power dissipation capacity is rated at 3.1W in free air and up to 120W with adequate heat sinking at the case. It also features a gate-to-source voltage tolerance of ±20V, making it suitable for designs requiring high reliability and durability in demanding environments.
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