IRF3710STRRPBFN-Channel 100 V 57A (Tc) 200W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-IRF371-996626
ManufacturerInfineon Technologies
MPN #.IRF3710STRRPBF
Estimated Lead Time-
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Datasheet
IRF3710S/L(PDF)
IRF3710S/L(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIRF3710
Continuous Drain Current (ID) @ 25°C57A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)130 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3130 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation200W (Tc)
RDS(on) Drain-to-Source On Resistance23mOhm @ 28A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF3710STRRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-efficiency power management applications. It features a 100V breakdown voltage and can handle a continuous drain current of 57A at a controlled case temperature. Encased in a D2PAK surface mount package for ease of integration into various electronic designs, it delivers up to 200W of power dissipation. The MOSFET exhibits a threshold voltage of 4V at a gate current of 250µA. With an input capacitance of 3130 pF measured at 25V, this component operates efficiently at a gate-source voltage of 10V.
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