IRF3709ZPBFN-Channel 30 V 87A (Tc) 79W (Tc) Through Hole TO-220AB
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ABRmicro #.ABR2045-IRF370-1037228
ManufacturerInfineon Technologies
MPN #.IRF3709ZPBF
Estimated Lead Time-
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Datasheet
IRF3709Z (S,L) PbF(PDF)
IRF3709Z (S,L) PbF(PDF)
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Packaging
Tube
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C87A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)26 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2130 pF @ 15 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation79W (Tc)
RDS(on) Drain-to-Source On Resistance6.3mOhm @ 21A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.25V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF3709ZPBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for use in power management and switching applications. It operates with a maximum voltage of 30V and can handle a continuous current of 87A when mounted with proper thermal management. The device exhibits a power dissipation capacity of 79W in a TO-220AB through-hole package, which provides robust thermal performance. It features a total gate charge of 26 nC at a gate-to-source voltage of 4.5V, with a permissible gate-source voltage range of up to ±20V. The IRF3709ZPBF is optimized for efficient switching with its gate threshold voltage options being 4.5V and 10V.
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