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IRF3707PBFN-Channel 30 V 62A (Tc) 87W (Tc) Through Hole TO-220AB

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ABRmicro #.ABR2045-IRF370-1004916
MPN #.IRF3707PBF
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C62A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)19 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1990 pF @ 15 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation87W (Tc)
RDS(on) Drain-to-Source On Resistance12.5mOhm @ 15A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF3707PBF, manufactured by Infineon Technologies, is a N-Channel MOSFET designed for efficient power management in electronic circuits. It can handle a continuous current of up to 62A and dissipate 87W of power when properly heat-sinked (measured at the case temperature, Tc). The MOSFET operates within a voltage range of 4.5V to 10V and features a maximum drain-source voltage (Vds) of 30V. Encased in a TO-220AB through-hole package, it allows for easy mounting and integration into various circuit designs. The gate charge is specified at 1990 pF at 15V, indicating its input capacitance and switching characteristics. Overall, the IRF3707PBF is a robust and reliable component for high-current applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.