IRF3704LN-Channel 20 V 77A (Tc) 87W (Tc) Through Hole TO-262
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ABRmicro #.ABR2045-IRF370-1000800
ManufacturerInfineon Technologies
MPN #.IRF3704L
Estimated Lead Time-
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Datasheet
IRF3704(PDF)
IRF3704(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C77A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)19 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1996 pF @ 10 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation87W (Tc)
RDS(on) Drain-to-Source On Resistance9mOhm @ 15A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF3704L is an N-Channel MOSFET manufactured by Infineon Technologies, characterized by its ability to handle a maximum drain-source voltage of 20 volts and a continuous drain current of 77 amperes at a case temperature (Tc). It is designed for through-hole mounting in a TO-262 package, offering a substantial power dissipation capability of 87 watts. The part features a relatively moderate input capacitance of 1996 pF at 10 volts, and it supports gate-source voltages of 4.5 volts and 10 volts. The IRF3704L is a Metal Oxide Semiconductor Field-Effect Transistor, suitable for applications requiring efficient power management and robust performance.
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