IRF3315STRRPBFN-Channel 150 V 21A (Tc) 3.8W (Ta), 94W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-IRF331-950809
ManufacturerInfineon Technologies
MPN #.IRF3315STRRPBF
Estimated Lead Time-
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Datasheet
IRF3315(S,L)PbF(PDF)
IRF3315(S,L)PbF(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C21A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)95 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1300 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 94W (Tc)
RDS(on) Drain-to-Source On Resistance82mOhm @ 12A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF3315STRRPBF is an N-channel MOSFET manufactured by Infineon Technologies, designed for efficient power management. It operates at a maximum voltage of 150 V and can handle a current of up to 21A when properly heat-sunk to the case (Tc), with a power dissipation of 94W under those conditions. In free air, the device supports a maximum power dissipation of 3.8W (Ta). It features a low on-resistance of 82 milliohms at 12A and 10V gate-to-source voltage, and offers a total gate charge of 95 nC at 10 V. The MOSFET is housed in a surface-mount D2PAK package, making it suitable for space-constrained environments.
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