IRF300P226N-Channel 300 V 100A (Tc) 556W (Tc) Through Hole TO-247AC
1:$8.1390
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ABRmicro #.ABR2045-IRF300-963038
ManufacturerInfineon Technologies
MPN #.IRF300P226
Estimated Lead Time18 Weeks
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Datasheet
IRF300P226(PDF)
IRF300P226(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 8.1390
Ext. Price$ 8.1390
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$8.1390$8.1390
25$6.4960$162.4030
100$5.8120$581.1880
500$5.1280$2563.8130
1000$4.6140$4614.4380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesStrongIRFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRF300
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)300 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)191 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10030 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation556W (Tc)
RDS(on) Drain-to-Source On Resistance19mOhm @ 45A, 10V
Package Type (Mfr.)TO-247AC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 270µA
Package / CaseTO-247-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF300P226 is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high power applications. It features a drain-source voltage of 300 V and a continuous drain current of 100 A at a case temperature (Tc). Its power dissipation capacity is rated at 556 W (Tc). The part is enclosed in a TO-247AC through-hole package. The MOSFET offers a gate threshold voltage of ±20 V and an on-state resistance of 19 milliohms at a drain current of 45 A and a gate-source voltage of 10 V. Additionally, it has a gate threshold voltage of 4 V at a drain current of 270 µA.
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