IRF2204LPBFN-Channel 40 V 170A (Tc) 200W (Tc) Through Hole TO-262
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ABRmicro #.ABR2045-IRF220-1031932
ManufacturerInfineon Technologies
MPN #.IRF2204LPBF
Estimated Lead Time-
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Datasheet
IRF2204SPbF, IRF2204LPbF(PDF)
IRF2204SPbF, IRF2204LPbF(PDF)
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Packaging
Tube
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C170A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)200 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5890 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation200W (Tc)
RDS(on) Drain-to-Source On Resistance3.6mOhm @ 130A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF2204LPBF is an N-Channel MOSFET produced by Infineon Technologies. It is designed to handle high power with a voltage rating of 40 V and a continuous drain current of 170A when mounted properly to optimize thermal performance. Housed in a TO-262 package suitable for through-hole mounting, this MOSFET is capable of dissipating up to 200W of power under controlled conditions. It features a low on-resistance of 3.6 mOhm at 130A and 10V, making it efficient for high-current switching applications.
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