IRF1607PBFN-Channel 75 V 142A (Tc) 380W (Tc) Through Hole TO-220AB
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ABRmicro #.ABR2045-IRF160-1021581
ManufacturerInfineon Technologies
MPN #.IRF1607PBF
Estimated Lead Time-
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Datasheet
IRF1607PbF(PDF)
IRF1607PbF(PDF)
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Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C142A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)320 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7750 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation380W (Tc)
RDS(on) Drain-to-Source On Resistance7.5mOhm @ 85A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF1607PBF is an N-channel MOSFET manufactured by Infineon Technologies, designed for high-efficiency power management. It is capable of handling a maximum drain-source voltage of 75 volts and can sustain a continuous drain current of up to 142 amperes, provided it is mounted appropriately to manage thermal conditions. The component is housed in a TO-220AB package, which is suitable for through-hole mounting, and it can dissipate power up to 380 watts, depending on the case temperature. The gate-source voltage is specified at 4 volts with a gate leakage current of 250 microamperes. The MOSFET has a typical input capacitance of 7750 pF when tested at 25 volts, making it well-suited for applications requiring high-speed switching and efficient power handling.
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