IRF1405STRRPBFN-Channel 55 V 131A (Tc) 200W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-IRF140-1048028
ManufacturerInfineon Technologies
MPN #.IRF1405STRRPBF
Estimated Lead Time-
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Datasheet
IRF1405(S,L)PbF(PDF)
IRF1405(S,L)PbF(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIRF1405
Continuous Drain Current (ID) @ 25°C131A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)260 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5480 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation200W (Tc)
RDS(on) Drain-to-Source On Resistance5.3mOhm @ 101A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF1405STRRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications utilizing a D2PAK package. It features a drain-source breakdown voltage of 55 V and can handle a continuous current of 131 A at a case temperature of 25°C, delivering a maximum power dissipation of 200 W under the same conditions. The MOSFET exhibits a low on-state resistance of 5.3 mOhm when carrying a current of 101A with a gate-source voltage of 10V. It is capable of a gate threshold voltage of 4V with a gate current of 250µA, making it suitable for various high-power applications that require efficient switching.
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