IRF1405STRLPBFN-Channel 55 V 131A (Tc) 200W (Tc) Surface Mount D2PAK
1:$2.2400
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ABRmicro #.ABR2045-IRF140-967244
ManufacturerInfineon Technologies
MPN #.IRF1405STRLPBF
Estimated Lead Time10 Weeks
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Datasheet
IRF1405(S,L)PbF(PDF)
IRF1405(S,L)PbF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.2400
Ext. Price$ 2.2400
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.2400$2.2400
10$1.8560$18.5620
100$1.4780$147.7940
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRF1405
Continuous Drain Current (ID) @ 25°C131A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)260 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5480 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation200W (Tc)
RDS(on) Drain-to-Source On Resistance5.3mOhm @ 101A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental Information
Other Related Documents
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF1405STRLPBF is a high-power N-channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications in a D2PAK package. It operates with a drain-source voltage rating of 55 V and can handle a continuous drain current of up to 131 A when properly cooled. This MOSFET offers a maximum power dissipation of 200 W under ideal thermal conditions (Tc). Its gate-source voltage is rated at ±20V, has a threshold voltage of 4V at a gate current of 250μA, and features an input capacitance of 5480 pF at 25 V. These specifications make the IRF1405STRLPBF suitable for demanding power electronic applications requiring efficient switching and thermal performance.
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