IRF1404ZSTRLPBFN-Channel 40 V 180A (Tc) 200W (Tc) Surface Mount PG-TO263-3
1:$1.8120
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRF140-996377
ManufacturerInfineon Technologies
MPN #.IRF1404ZSTRLPBF
Estimated Lead Time12 Weeks
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Datasheet
IRF1404ZPBF Datasheet(PDF)
IRF1404ZPBF Datasheet(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.8120
Ext. Price$ 1.8120
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.8120$1.8120
10$1.5020$15.0240
100$1.1950$119.5310
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRF1404
Continuous Drain Current (ID) @ 25°C180A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)150 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4340 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation200W (Tc)
RDS(on) Drain-to-Source On Resistance3.7mOhm @ 75A, 10V
Package Type (Mfr.)PG-TO263-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 150µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental Information
Other Related Documents
PCN Design/Specification
PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF1404ZSTRLPBF from Infineon Technologies is a surface-mount N-Channel MOSFET characterized by its ability to handle voltages up to 40 V and a continuous current of 180A under certain thermal conditions (Tc). This component features a low on-resistance of 3.7 mOhm at 75A and 10V, enhancing its efficiency in power management applications. It is enclosed in a PG-TO263-3 package, allowing for effective electrical performance while managing thermal dissipation up to a maximum power level of 200W under specific conditions. The device is suitable for robust circuit designs necessitating high current capacity and low energy loss.
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