IRF1404ZSTRLN-Channel 40 V 180A (Tc) 220W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-IRF140-941258
ManufacturerInfineon Technologies
MPN #.IRF1404ZSTRL
Estimated Lead Time-
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Datasheet
IRF1404Z(S,L)(PDF)
IRF1404Z(S,L)(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C180A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)150 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4340 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation220W (Tc)
RDS(on) Drain-to-Source On Resistance3.7mOhm @ 75A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF1404ZSTRL, manufactured by Infineon Technologies, is a surface-mount N-Channel MOSFET housed in a D2PAK package. It is designed to handle a maximum voltage of 40 V and a continuous current of 180 A when connected to a case temperature (Tc). This component can dissipate up to 220 W under suitable thermal conditions. Key electrical characteristics include a gate charge of 150 nC at 10 V and an input capacitance of 4340 pF at 25 V, making it suitable for managing high power levels efficiently.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.