IRF1018ESLPBFN-Channel 60 V 79A (Tc) 110W (Tc) Through Hole TO-262
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ABRmicro #.ABR2045-IRF101-995864
ManufacturerInfineon Technologies
MPN #.IRF1018ESLPBF
Estimated Lead Time-
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Datasheet
IRF1018EPBF Datasheet(PDF)
IRF1018EPBF Datasheet(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C79A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)69 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2290 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation110W (Tc)
RDS(on) Drain-to-Source On Resistance8.4mOhm @ 47A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 100µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF1018ESLPBF, manufactured by Infineon Technologies, is an N-channel MOSFET designed to handle a maximum drain-source voltage of 60 V and a continuous drain current of up to 79 A when appropriately cooled. It is encapsulated in a TO-262 package suitable for through-hole mounting, and operates at a power dissipation of 110 W under specified thermal conditions. The device features a gate charge of 69 nC at 10 V and boasts an input capacitance of 2290 pF at 50 V, which reflects its switching performance characteristics.
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