ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
IRF1010ZPBFN-Channel 55 V 75A (Tc) 140W (Tc) Through Hole TO-220AB

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRF101-926977
ManufacturerInfineon Technologies
MPN #.IRF1010ZPBF
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetIRF1010Z (S,L) PbF(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
FS3L40R07W2H5FB11BOMA1$77.5420
Infineon Technologies
IGBT Module Trench Field Stop Three Phase Inverter 650 V 40 A 20 mW Chassis Mount AG-EASY2B-2
IMW65R072M1HXKSA1$8.2660
Infineon Technologies
N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
IMZA65R027M1HXKSA1$15.4470
Infineon Technologies
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
IPAN60R125PFD7SXKSA1$2.2480
Infineon Technologies
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
IPD60R1K5PFD7SAUMA1$0.6420
Infineon Technologies
N-Channel 600 V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
IPS60R1K0PFD7SAKMA1$0.3040
Infineon Technologies
N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
IPS60R210PFD7SAKMA1$0.6960
Infineon Technologies
N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3
Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRF1010
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)95 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2840 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation140W (Tc)
RDS(on) Drain-to-Source On Resistance7.5mOhm @ 75A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IRF1010Z (S,L) PbF
Other Related Documents
IR Part Numbering System
PCN Packaging
Package Drawing Update 19/Aug/2015Packing Material Update 16/Sep/2016
Simulation Models
IRF1010ZL Saber Model
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF1010ZPBF by Infineon Technologies is an N-channel MOSFET housed in a TO-220AB package. It is designed to handle voltages up to 55V and continuous currents of 75A at a case temperature (Tc) with a maximum power dissipation of 140W. This MOSFET features a low on-state resistance of 7.5 mOhm at 75A and 10V, and a gate charge of 95 nC at 10V, making it efficient in minimizing conduction losses. The device is suitable for applications requiring effective power management in high-current scenarios.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.