IRF1010NSTRLN-Channel 55 V 85A (Tc) 180W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-IRF101-926627
ManufacturerInfineon Technologies
MPN #.IRF1010NSTRL
Estimated Lead Time-
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Datasheet
IRF1010NS(L)(PDF)
IRF1010NS(L)(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C85A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)120 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3210 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation180W (Tc)
RDS(on) Drain-to-Source On Resistance11mOhm @ 43A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF1010NSTRL, manufactured by Infineon Technologies, is an N-Channel MOSFET designed for surface mount applications with a D2PAK package. It can handle a maximum continuous current of 85A and a drain-to-source voltage of 55V, with a power dissipation capacity of 180W when properly cooled. The device requires a gate-to-source voltage of 4V at 250µA and features an input capacitance of 3210 pF at 25V. This MOSFET is suitable for applications requiring efficient switching due to its robust thermal and electrical characteristics.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.