IRF1010NPBFN-Channel 55 V 85A (Tc) 180W (Tc) Through Hole TO-220AB
1:$1.2820
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ABRmicro #.ABR2045-IRF101-1032439
ManufacturerInfineon Technologies
MPN #.IRF1010NPBF
Estimated Lead Time-
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Datasheet
IRF1010NPbF(PDF)
IRF1010NPbF(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.2820
Ext. Price$ 1.2820
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2820$1.2820
50$1.0300$51.4780
100$0.8470$84.6810
500$0.7170$358.5940
1000$0.6080$607.7500
2000$0.5780$1156.0000
5000$0.5560$2778.4380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusEnd of Life (EOL)
Base Product NumberIRF1010
Continuous Drain Current (ID) @ 25°C85A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)120 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3210 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation180W (Tc)
RDS(on) Drain-to-Source On Resistance11mOhm @ 43A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF1010NPBF is an N-channel MOSFET manufactured by Infineon Technologies, packaged in a TO-220AB through-hole configuration. It is engineered to handle a maximum drain-source voltage of 55V and support a continuous current of up to 85A (Tc), with a power dissipation capacity of 180W (Tc). The device features a gate threshold voltage of ±20V, allowing for precise control, and achieves on-resistance as low as 11mOhm at a test current of 43A with a gate voltage of 10V. It requires a minimum gate drive voltage of 4V to maintain operation at a gate-source current of 250µA, making it suitable for various power management applications.
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