IPZ60R125P6FKSA1N-Channel 600 V 37.9A (Tc) 219W (Tc) Through Hole PG-TO247-4
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ABRmicro #.ABR2045-IPZ60R-1019507
ManufacturerInfineon Technologies
MPN #.IPZ60R125P6FKSA1
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Datasheet
IPZ60R125P6(PDF)
IPZ60R125P6(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ P6
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPZ60R
Continuous Drain Current (ID) @ 25°C37.9A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)70 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3330 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation219W (Tc)
RDS(on) Drain-to-Source On Resistance99mOhm @ 14.5A, 10V
Package Type (Mfr.)PG-TO247-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 1.21mA
Package / CaseTO-247-4
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPZ60R125P6FKSA1 is a power MOSFET manufactured by Infineon Technologies, designed with an N-channel configuration. It operates at a maximum voltage of 600 V and can handle a continuous current of 37.9A when attached to a suitable heatsink, with a power dissipation capability of 219W in optimal thermal conditions. Encased in a PG-TO247-4 package, this through-hole device supports gate drive voltage levels of up to 10V and features a gate-source voltage rating of ±20V, making it suitable for high-voltage switching applications.
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