IPZ60R040C7XKSA1N-Channel 600 V 50A (Tc) 227W (Tc) Through Hole PG-TO247-4
1:$7.1460
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ABRmicro #.ABR2045-IPZ60R-1012942
ManufacturerInfineon Technologies
MPN #.IPZ60R040C7XKSA1
Estimated Lead Time17 Weeks
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Datasheet
IPZ60R040C7(PDF)
IPZ60R040C7(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 7.1460
Ext. Price$ 7.1460
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$7.1460$7.1460
30$5.7010$171.0410
120$5.2840$634.0580
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ C7
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPZ60R040
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)107 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4340 pF @ 400 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation227W (Tc)
RDS(on) Drain-to-Source On Resistance40mOhm @ 24.9A, 10V
Package Type (Mfr.)PG-TO247-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1.24mA
Package / CaseTO-247-4
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPZ60R040C7XKSA1 from Infineon Technologies is a robust N-Channel MOSFET designed for high voltage applications, featuring a breakdown voltage of 600 V and a continuous current rating of 50A at a case temperature (Tc). It boasts a power dissipation capacity of 227W under the same conditions. This MOSFET comes in a PG-TO247-4 package, suitable for through-hole mounting, providing reliable performance in demanding environments. It operates with a gate-source voltage range of ±20V and offers a low on-resistance of 40mOhm when conducting at 24.9A and 10V gate-source voltage, ensuring efficient current handling. Additionally, it exhibits an input capacitance of 4340 pF at 400 V, highlighting its suitability for various electrical applications requiring high efficiency and power density.
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