IPW90R500C3XKSA1N-Channel 900 V 11A (Tc) 156W (Tc) Through Hole PG-TO247-3-21
1:$3.6680
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ABRmicro #.ABR2045-IPW90R-994535
ManufacturerInfineon Technologies
MPN #.IPW90R500C3XKSA1
Estimated Lead Time15 Weeks
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Datasheet
IPW90R500C3(PDF)
IPW90R500C3(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.6680
Ext. Price$ 3.6680
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.6680$3.6680
30$2.9060$87.1780
120$2.4910$298.8600
510$2.2130$1128.7260
1020$1.8960$1933.4100
2010$1.7850$3587.8500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPW90R500
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)900 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)68 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1700 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation156W (Tc)
RDS(on) Drain-to-Source On Resistance500mOhm @ 6.6A, 10V
Package Type (Mfr.)PG-TO247-3-21
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 740µA
Package / CaseTO-247-3
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPW90R500C3XKSA1, manufactured by Infineon Technologies, is an N-Channel MOSFET designed for high-voltage and high-efficiency applications. With a voltage rating of 900 V and a continuous current capacity of 11A at a case temperature (Tc), it provides a robust power handling capability. The device features a low on-resistance of 500 mOhm at 6.6A and a gate-to-source voltage of 10V, ensuring efficient performance. Housed in a PG-TO247-3-21 through-hole package, it supports a power dissipation of 156W at Tc, making it suitable for demanding electrical environments. Additionally, its input capacitance is rated at 1700 pF at 100 V.
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