IPW90R340C3XKSA1N-Channel 900 V 15A (Tc) 208W (Tc) Through Hole PG-TO247-3-21
1:$5.4460
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ABRmicro #.ABR2045-IPW90R-1019297
ManufacturerInfineon Technologies
MPN #.IPW90R340C3XKSA1
Estimated Lead Time15 Weeks
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Datasheet
IPW90R340C3(PDF)
IPW90R340C3(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 5.4460
Ext. Price$ 5.4460
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.4460$5.4460
10$4.5730$45.7300
240$3.4950$838.6950
720$3.2900$2368.4400
1200$2.8160$3378.7500
2160$2.6510$5726.0250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPW90R340
Continuous Drain Current (ID) @ 25°C15A (Tc)
Drain-to-Source Voltage (VDS)900 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)94 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2400 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation208W (Tc)
RDS(on) Drain-to-Source On Resistance340mOhm @ 9.2A, 10V
Package Type (Mfr.)PG-TO247-3-21
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 1mA
Package / CaseTO-247-3
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPW90R340C3XKSA1 is an N-Channel power MOSFET manufactured by Infineon Technologies, designed for high voltage applications with a maximum drain-source voltage of 900V. It supports a continuous drain current of 15A when measured at case temperature (Tc), and a significant power dissipation capability of 208W under the same conditions. Encased in a PG-TO247-3-21 package for through-hole mounting, it features a low gate charge of 94 nC at 10V and a gate threshold voltage of 3.5V at a 1mA drain current. Additionally, the part has an input capacitance of 2400 pF at 100V, making it suitable for efficient high-voltage switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.