IPW60R199CPFKSA1N-Channel 600 V 16A (Tc) 139W (Tc) Through Hole PG-TO247-3-1
1:$2.6370
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IPW60R-1031016
ManufacturerInfineon Technologies
MPN #.IPW60R199CPFKSA1
Estimated Lead Time-
SampleGet Free Sample
Datasheet
IPW60R199CP(PDF)
IPW60R199CP(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 119
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 2.6370
Ext. Price$ 2.6370
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
240$2.6370$632.9100
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
FS3L40R07W2H5FB11BOMA1$77.5420
IGBT Module Trench Field Stop Three Phase Inverter 650 V 40 A 20 mW Chassis Mount AG-EASY2B-2
IMW65R072M1HXKSA1$8.2660
N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
IMZA65R027M1HXKSA1$15.4470
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
IPAN60R125PFD7SXKSA1$2.2480
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
IPD60R1K5PFD7SAUMA1$0.6420
N-Channel 600 V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
IPS60R1K0PFD7SAKMA1$0.3040
N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
IPS60R210PFD7SAKMA1$0.6960
N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberIPW60R199
Continuous Drain Current (ID) @ 25°C16A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)43 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1520 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation139W (Tc)
RDS(on) Drain-to-Source On Resistance199mOhm @ 9.9A, 10V
Package Type (Mfr.)PG-TO247-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 660µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPW60R199CPFKSA1 is a power semiconductor device from Infineon Technologies, specifically a N-Channel MOSFET designed for handling high voltage and current. With a voltage rating of 600 V and a current capacity of 16A at the case temperature, it delivers a substantial power handling capability of 139W. This MOSFET features a maximum threshold voltage of ±20V, and an on-resistance of 199 mOhm at 9.9A, 10V. It is encapsulated in a robust PG-TO247-3-1 through-hole package, ensuring efficient thermal management and ease of integration into electronic systems.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.